NXP Semiconductors A5Gx Airfast RF Power GaN Transistors
NXP Semiconductors A5Gx Airfast RF Power GaN Transistors are 85W and 112W asymmetrical Doherty RF power GaN transistors. The NXP Semiconductors A5Gx transistors are ideal for cellular base stations needing wide bandwidths. The devices' performance is guaranteed within the range of the specified frequency for each part, but not outside it.
FEATURES
- High terminal impedances for optimal broadband performance
- Advanced high-performance in-package Doherty
- Improved linearized error vector magnitude with next-generation signal
- Withstands extremely high output VSWR and broadband operating conditions
- Plastic package
- Applications include cellular base stations
PINNING INFORMATION
