MCC’s SiC MOSFETs are optimized for higher switching frequency, high blocking voltage with low on-resistance (RDS(ON)), and avalanche capability. These products work well in the gate-source voltage (VGS) range from -4 V to +18 V (1200 V) and -3 V to +20 V (1700 V). These N-channel MOSFETs have optimum performance when driven with maximum voltage. The RDS(ON) stability over the temperature helps to reduce the heatsink size/requirements.