ROHM’s BV1LExxxEFJ-C and BM2LExxxFJ-C family of products are intelligent low-side devices that can switch currents for any type of resistive, capacitive, or inductive load. When switching off an inductive load, the power MOSFET inside the smart switch needs to dissipate all the magnetic energy stored previously in the inductor’s magnetic field. During this time the device protects itself by actively clamping the voltage to a safe level. The dissipated power generates heat that is distributed on the integrated power MOSFET’s surface.

ROHM’s products combine heat suppression with low ON resistance (difficult to achieve in a compact size), by optimally controlling the number of current-carrying channels using proprietary TDACC™ circuit and device technology. TDACC offers increased integration capability, allowing a 2-channel 40 mΩ (ON resistance) product in the compact SOP-J8 package.

A wide range of ON resistance values (40 mΩ/80 mΩ/160 mΩ/250 mΩ) in both 1-channel and 2-channel configurations are offered to meet diverse customer needs. Furthermore, the contact discharge tolerance of all the products in the family is higher than that of other standard products. This adds to a safer operation inside various electronic equipment types.

Features

• Packages:
  • HTSOP-J8 (4.9 mm x 6.0 mm x 1.0 mm)
  • SOP-J8 (4.9 mm x 6.0 mm x 1.65 mm)