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1,200 V IGBT7 TRENCHSTOP™ Family of Silicon Carbide MOSFETs

2023-05-05

1,200 V IGBT7 TRENCHSTOP™ Family of Silicon Carbide MOSFETs

Infineon Technologies’ IGBTs are available in four different package types to fit various applications

Image of Infineon Technologies 1200 V IGBT7 TRENCHSTOP™ FamilyInfineon Technologies’ 7th generation of 1,200 V TRENCHSTOP™ IGBTs sets a benchmark in the world of discrete IGBT and diode technology. This unique discrete offering provides a high current rating portfolio up to 140 A in four different package types, with conduction parameter VCE(sat) 50% lower compared to previous generations and switching losses up to 84% lower. They inherently provide easy EMI design and higher reliability in applications with harsh conditions (including HV-H3TRB and cosmic ray robustness). For the first time ever, this technology is now available for the 1,200 V discrete IGBT market. Check out the full lineup that includes the H7, S7, and T7 series with optimized performance for specific applications.

S7 series: The 1,200 V TRENCHSTOP IGBT7 S7 portfolio represents the superior option for all industrial applications requiring short-circuit capability/ruggedness. The benchmark efficiency and short-circuit rugged discretes provide at least 10% lower saturation voltage than previous generations. Select devices are co-packed with very soft full-rated EC7 (emitter-controlled) diodes, offering a significantly reduced IGBT saturation VCE(sat) and low Qrr. This series provides superior controllability and short-circuit ruggedness extending benchmarks in traditional IGBT devices.

H7 series: The 1,200 V IGBT co-pack discrete device uses TRENCHSTOP IGBT7 H7 combined with emitter-controlled EC7 rapid diode technologies to provide specific, best-in-class conduction and switching power loss performance coupled with robustness for harsh conditions, and a unique high-current rating portfolio, covering 40 A to 140 A in a TO-247 package. The resulting performance helps to fulfill the increasing requirements of modern fast-switching industrial inverter systems.

Existing T7 series: This 650 V series was the first designed with the latest micro-pattern trench technology that offers unparalleled control and performance, along with a freewheeling diode resulting in significant loss reduction, improved efficiency, and increased power density. It was designed to enable switching frequency flexibility going from below 5 kHz up to 40 kHz in a single solution. It is a one-to-one alternative to predecessor generations with improved performance and optimized for industrial motor drives and controls.

Features
  • High power density with up to 140 A rating (H7 only)
  • Fast switching behavior with low EMI emissions
  • Optimized diode for target applications, very soft and low Qrr (specific devices)
  • Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behavior
 
  • Offering Tj (max) of +175°C
  • Up to four package choices depending on the series
  • Qualified according to JEDEC for target applications
  • Pb-free lead plating
  • RoHS compliant
Applications
  • Fast EV charging
  • Industrial heating and welding
  • Solutions for photovoltaic energy systems
 
  • Uninterruptible power supplies (UPS)
  • Industrial motor drives and controls
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